symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 30 40 59 75 r q j l 16 24 r epetitive avalanche energy 0.3mh b mj 135 a valanche current b a 30 p ulsed drain current b 70 a t a =70c 11 c ontinuous drain current af t a =25c i dsm 14 m aximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q j a c/w 40 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state maximum units parameter junction and storage temperature range c -55 to 150 3.1 w t a =70c 2.0 p ower dissipation t a =25c p d AO4480 40v n-channel mosfet product summary v ds (v) = 40v i d = 14a (v gs = 10v) r ds(on) < 11.5m w ( v gs = 10v) r ds(on) < 15.5m w ( v gs = 4.5v) e sd rating: 4kv hbm 100% uis tested 100% rg tested general description the AO4480 uses advanced trench technology to pr ovide excellent r ds(on) , low gate charge. it is esd p rotected. this device is suitable for use as a low side switch in smps and general purpose applications. soic-8 top view bottom view d d d d s s s g g d s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4480 symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 m a v gs(th) 1 2 3 v i d(on) 70 a 9 11.5 t j =125c 13 12 15.5 m w g fs 50 s v sd 0.7 1 v i s 4 a c iss 1600 1920 pf c oss 320 pf c rss 100 pf r g 3.4 w q g (10v) 22 nc q g (4.5v) 10.5 nc q gs 4.2 nc q gd 4.8 nc t d(on) 3.5 ns t r 6 ns t d(off) 13.2 ns t f 3.5 ns t rr 31 ns q rr 33 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =14a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =14a reverse transfer capacitance i f =14a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ua gate threshold voltage v ds =v gs i d =250 m a v ds =32v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =14a turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =20v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =14a a: the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b : repetitive rating, pulse width limited by junction temperature. c. the r q j a is the sum of the thermal impedence from junction to lead r q j l and lead to ambient. d . the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa c urve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev2: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4480 typical electrical and thermal characteristics 500 150 60 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 6 8 10 12 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =5a v gs =10v i d =14a 5 10 15 20 25 30 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =14a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 4v 10v 5v v gs =3.5v -40c -40c 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4480 typical electrical and thermal characteristics 500 150 60 0 2 4 6 8 10 0 4 8 12 16 20 24 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q q q q ja normalized transient thermal resistance c oss c rss v ds =20v i d =14a single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c tc=25c d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 10s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 100ms 1s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
|
